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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">pribor</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений. Приборостроение</journal-title><trans-title-group xml:lang="en"><trans-title>Journal of Instrument Engineering</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">0021-3454</issn><issn pub-type="epub">2500-0381</issn><publisher><publisher-name>Национальный исследовательский университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/0021-3454-2024-67-8-697-712</article-id><article-id custom-type="elpub" pub-id-type="custom">pribor-89</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ОПТИЧЕСКИЕ И ОПТИКО-ЭЛЕКТРОННЫЕ ПРИБОРЫ И КОМПЛЕКСЫ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>OPTICAL AND OPTOELECTRONIC DEVICES AND COMPLEXES</subject></subj-group></article-categories><title-group><article-title>Использование теории связанных мод при моделировании межмодовой связи в изогнутых волноводах на основе тонкопленочного ниобата лития</article-title><trans-title-group xml:lang="en"><trans-title>Methods of Compensating for the Influence of Differences in the Reflectivity of Objects to Improve the Accuracy of Constructing Depth Maps Using an Active-pulse Television Measuring System</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Москалев</surname><given-names>Д. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Moskalev</surname><given-names>D. N.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Дмитрий Николаевич Москалев – аспирант; кафедра нанотехнологий и микросистемной техники; вед. инженер-исследователь, ассистент</p><p>Пермь</p></bio><bio xml:lang="en"><p>Dmitry N. Moskalev –Post-Gradulate Student; Leading Engineer-Researcher; Assistant</p><p>Perm</p></bio><email xlink:type="simple">moskalevdn@pnppk.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Вобликов</surname><given-names>Е. Д.</given-names></name><name name-style="western" xml:lang="en"><surname>Voblikov</surname><given-names>E. D.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Евгений Дмитриевич Вобликов – магистр; начальник лаборатории</p><p>Пермь</p></bio><bio xml:lang="en"><p>Eugene D. Voblikov – MSc; Head of Laboratory</p><p>Perm</p></bio><email xlink:type="simple">voblikov@pnppk.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Криштоп</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Krishtop</surname><given-names>V. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Виктор Владимирович Криштоп – докт. физ.-мат. наук, профессор; кафедра нанотехнологий и микросистемной техники, кафедра общей физики; главн. науч. сотр., профессор</p><p>Пермь</p></bio><bio xml:lang="en"><p>Victor V. Krishtop – Dr. Sci., Professor; ChiefResearcher; Department of Nanotechnologies and Microsystem Technique; Professor; Department of General Physics; Professor</p><p>Perm</p></bio><email xlink:type="simple">Krishtop@pnppk.ru</email><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Максименко</surname><given-names>В. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Maksimenko</surname><given-names>V. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Виталий Александрович Максименко – канд. физ.-мат. наук, доцент; кафедра общей физики; доцент</p><p>Пермь</p></bio><bio xml:lang="en"><p>Vitaly A. Maksimenko – PhD, Associate Professor; Department of General Physics; Associate Professor</p><p>Perm</p></bio><email xlink:type="simple">mva30@mail.ru</email><xref ref-type="aff" rid="aff-4"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Волынцев</surname><given-names>А. Б.</given-names></name><name name-style="western" xml:lang="en"><surname>Volyntsev</surname><given-names>A. B.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Анатолий Борисович Волынцев – докт. физ.-мат. наук, профессор; кафедра нанотехнологий имикросистемной техники; зав. кафедрой</p><p>Пермь</p></bio><bio xml:lang="en"><p>Anatoly B. Volyntsev – Dr. Sci., Professor; Department of Nanotechnologies and Microsystem Technique; Head of the Department</p><p>Perm</p></bio><email xlink:type="simple">klemluk_g_v@gmail.ru</email><xref ref-type="aff" rid="aff-5"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Пермская научно-производственная приборостроительная компания; Пермский государственный национальный исследовательский университет</institution></aff><aff xml:lang="en"><institution>Perm Scientific-Industrial Instrument Making Company; Perm State University</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Пермская научно-производственная приборостроительная компания</institution></aff><aff xml:lang="en"><institution>Perm Scientific-Industrial Instrument Making Company</institution></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Пермская научно-производственная приборостроительная компания; Пермский государственный национальный исследовательский университет; Пермский национальный исследовательский политехнический университет</institution></aff><aff xml:lang="en"><institution>Perm Scientific-Industrial Instrument Making Company; Perm State University; Perm National Research Polytechnic University</institution></aff></aff-alternatives><aff-alternatives id="aff-4"><aff xml:lang="ru"><institution>Пермский национальный исследовательский политехнический университет</institution></aff><aff xml:lang="en"><institution>Perm National Research Polytechnic University</institution></aff></aff-alternatives><aff-alternatives id="aff-5"><aff xml:lang="ru"><institution>Пермский государственный национальный исследовательский университет</institution></aff><aff xml:lang="en"><institution>Perm State University</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2024</year></pub-date><pub-date pub-type="epub"><day>26</day><month>11</month><year>2024</year></pub-date><volume>67</volume><issue>8</issue><fpage>697</fpage><lpage>712</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Национальный исследовательский университет ИТМО, 2024</copyright-statement><copyright-year>2024</copyright-year><copyright-holder xml:lang="ru">Национальный исследовательский университет ИТМО</copyright-holder><copyright-holder xml:lang="en">Национальный исследовательский университет ИТМО</copyright-holder><license xlink:href="https://pribor.ifmo.ru/jour/about/submissions#copyrightNotice" xlink:type="simple"><license-p>https://pribor.ifmo.ru/jour/about/submissions#copyrightNotice</license-p></license></permissions><self-uri xlink:href="https://pribor.ifmo.ru/jour/article/view/89">https://pribor.ifmo.ru/jour/article/view/89</self-uri><abstract><p>Тонкопленочный ниобат лития, благодаря уникальным свойствам и возможности создания на его основе высококонтрастных волноводов, является перспективным материалом для изготовления быстродействующих фотонных интегральных схем с большим числом элементов на чипе. Однако процесс проектирования и моделирования элементов таких схем на тонкопленочном ниобате лития осложнен наличием анизотропии. Так, например, на X-срезе ниобата лития влияние анизотропии будет проявляться в изменении постоянной распространения мод, а также в перекачке мощности между модами при распространении излучения в плоскости пластины. Рассмотрена связь между фундаментальными ТЕ- и ТМ-модами в изогнутых одномодовых волноводах на X-срезе тонкопленочного ниобата лития. Межмодовая связь проанализирована с помощью теории связанных мод. Коэффициент связи вычислен по формулам, соответствующим случаям анизотропии произвольной и малой величины. Показано, что если рассматривается влияние только анизотропии кристалла, то расчет коэффициентов связи по формулам для произвольной и малой анизотропии дает схожие результаты. Доля перекачанной мощности между фундаментальными ТЕ- и ТМ-модами определялся путем решения уравнений связанных мод с учетом радиуса кривизны, угла поворота волновода и коэффициента связи.</p></abstract><trans-abstract xml:lang="en"><p>Thin-film lithium niobate, due to its unique properties and the possibility of manufacturing high-contrast waveguides based on it, is a promising material for the production of high-speed photonic integrated circuits with a large number of elements per chip. However, the process of designing and modeling elements of such circuits on thin-film lithium niobate is complicated by the presence of anisotropy. For example, on the X-cut of lithium niobate, the influence of anisotropy will manifest itself in a change in the mode propagation constant, as well as in the transfer of power between modes during the propagation of radiation in the plane of the plate. The coupling between fundamental TE and TM modes in curved single-mode waveguides on the X-cut of thin-film lithium niobate is considered. The intermode coupling is analyzed using the coupled-mode theory. The coupling coefficient is calculated using the formulas corresponding to the cases of arbitrary and small anisotropy. It is shown that if only the influence of the crystal anisotropy is considered, then the calculation of the coupling coefficients using the formulas for arbitrary and small anisotropy gives similar results. The volume of the transferred power between the fundamental TE and TM modes is determined by solving the coupled-mode equations taking into account the radius of curvature, the angle of rotation of the waveguide, and the coupling coefficient.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>теория связанных мод</kwd><kwd>тонкопленочный ниобат лития</kwd><kwd>изогнутый оптический волновод</kwd></kwd-group><kwd-group xml:lang="en"><kwd>coupled mode theory</kwd><kwd>thin-film lithium niobate waveguides</kwd><kwd>bend optical waveguides</kwd><kwd>mode coupling</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Исследования выполнены при поддержке Министерства науки и высшего образования Российской Федерации (проект № FSNM-2023-0006).</funding-statement><funding-statement xml:lang="en">The research was carried out with the support of the Ministry of Science and Higher Education of the Russian Federation (project № FSNM-2023-0006).</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Гилев Д. 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