ISSN 0021-3454 (print version)
ISSN 2500-0381 (online version)
Menu
Sign in
№
11 Issue
vol 67 / November, 2024 Article

Partners





















DOI 10.17586/0021-3454-2016-59-2-95-106
UDC 621.38

THE STATE AND PROSPECTS OF FURTHER DEVELOPMENT OF THEORY OF POWER BIPOLAR TRANSISTORS

B. I. Grigoryev
ITMO University; Associate Professor, Department of Electronics


Read the full article 

Abstract. The main stages of transition from early samples of Germanium alloy transistors to modern superpower bipolar Silicon transistors are reviewed. The state of theory of the semiconductor device performance and model notion of their output characteristics are analyzed. Perspective types and classes of the transistors on the base of Silicon and wide-band-gap materials are specified. Information about n ondestructive methods and means for measurement of electro physical parameters in bipolar transistor structures aimed at development of controllable technology of the transistors are presented. Analysis of equipment used for measurement output characteristics of the transistors, including super-powerful, and able to itch pulse power up to 1 megawatt is carried out. Basic problems related to the task of creation of power bipolar transistors with qualitatively superior set of output characteristics are formulated, approaches to the problems solutions are envisaged.
Keywords: силовые биполярные транзисторы, фотонно-инжекционные транзисторы, методы измерения

References:
  1. Bardeen J., Brattain W.H. Phys. Rev., 1948, no. 74, pp. 230–235.
  2. Shockley W. Bell. Tech. J., 1949, no. 28, pp. 435–445.
  3. Alferov Zh.I., Akhmedov F.A., Korol'kov V.I., Nikitin V.G. Semiconductors, 1973, no. 6(7), pp. 1159–1163. (in Russ.)
  4. Alferov Zh.I., Akhmedov F.A., Korol'kov V.I. Technical Physics Letters, 1975, no. 17(1), pp. 769–773. (in Russ.)
  5. Grigor'ev B.I.,Togatov V.V. Technical Physics Letters, 1981, no. 19(7), pp. 1205–1209. (in Russ.)
  6. Andreev V.M., Danil'chenko V.G., Zadiranov Yu.M., Korol'kov V.I., Rozhkov A.V., Fedorenko T.P., Yakovenko A.A. Technical Physics Letters, 1982, no. 13(8), pp. 781–784. (in Russ.)
  7. Gaybulaev S., Egorov B.V., Korol'kov V.I., Rozhkov A.V., Romanova E.P., Yuferev V.S. Technical Physics, 1983, no. 4(53), pp. 763–765. (in Russ.)
  8. Andreev V.M., Zadiranov Yu.M., Korol'kov V.I., Rozhkov A.V., Yakovenko A.A. Semiconductors, 1983, no. 9(17), pp. 1618–1622. (in Russ.)
  9. Zadiranov Yu.M., Korol'kov V.I., Nikitin V.G., Rozhkov A.V. Technical Physics Letters, 1984, no. 16(10), pp. 976–979. (in Russ.)
  10. Grigor'ev B.I., Korol'kov V.I., Rozhkov A.V., Yuferev V.S. Semiconductors, 1985, no. 5(19), pp. 878–884. (in Russ.)
  11. Alferov Zh.I., Efanov V.M., Zadiranov Yu.M., Kardo-Sysoev A.F., Korol'kov V.I., Ponomarev S.I., Rozhkov A.V. Technical Physics Letters, 1986, no. 21(12), pp. 1281–1285. (in Russ.)
  12. Grigor'ev B.I., Korol'kov V.I., Nikitin V.G., Nugmanov D.P., Orlov N.Yu., RozhkovA.V. Technical Physics, 1989, no. 2(59), pp. 156–158. (in Russ.)
  13. Zipperian T.T., Dawson L.R. J. Appl. Phys., 1983, no. 10(54), pp. 6019–6025.
  14. Afonin L.N., Mazel' E.Z. Mikroelektronika i poluprovodnikovye pribory (Microelectronics and Semiconductor Devices), Moscow, 1978, no. 3, pp. 133–148. (in Russ.)
  15. Potapchuk V.A., Potapchuk V.B. Silovye tranzistory za rubezhom (Power Transistors in Foreign Countries), Moscow, 1981, 83 р. (in Russ.)
  16. Afonin L.N.,Mazel' E.Z. Elektronnaya tekhnika. Seriya 2. Poluprovodnikovye pribory, 1983, no. 3(162), pp. 30–36. (in Russ.)
  17. Potapchuk V.A. Russian Electrical Engineering, 1984, no. 3, pp. 11–14. (in Russ.)
  18. Sze S. M. Physics of Semiconductor Devices, NY, Wiley, 1969.
  19. Blicher A. Field-Effect and Bipolar Power Transistor Physics, NY, Academic Press, 1981, 318 р.
  20. Krutyakova M.G., Charykov N.A., Yudin V.V. Poluprovodnikovye pribory i osnovy ikh proektirovaniya (Semiconductor Devices and Fundamentals of Their Design), Moscow, 1983, 352 р. (in Russ.)
  21. Webster W.M. Proc. IRE., 1954, no. 42, pp. 914–920.
  22. Clark L.E. IEEE Trans. Electron. Dеvices, 1970, no. 9(ED-17), pp. 661–666.
  23. Grigor'ev B.I., Rudskiy V.A., Togatov V.V. Journal of Communications Technology and Electronics, 1981, no. 7(26), pp. 1514–1521. (in Russ.)
  24. Gummel H.K., Poon H.C. Bell Syst.Tech J., 1970, no. 5(49), pp. 827–834.
  25. Olmstead J., Einthoven W. RCA Rev., 1971, no. 2(32), pp. 221–246.
  26. Ebers J.J., Moll J.L. Proc. IRE., 1954, no. 42, pp. 1761–1768.
  27. Moll J.L., Ross I.M. Proc. IRE., 1956, no. 1(44), pp. 72–78.
  28. Kurkin Yu.L., Sokolov A.A. Elektrichestvo, 1959, no. 8, pp. 66–71. (in Russ.)
  29. Grigor'ev B.I. Izv. vuzov. Priborostroenie, 2015, no. 5(58), pp. 372–379. (in Russ.)
  30. Grigor'ev B.I. Elektrotekhnicheskaya promyshlennost'. Ser. Preobrazovatel'naya tekhnika, 1984, no. 11(169), pp. 1–3. (in Russ.)
  31. Grigor'ev B.I. Journal of Communications Technology and Electronics, 1986, no. 7(31), pp. 1430–1440. (in Russ.)
  32. Gol'denberg L.M., Faynberg A.S. Izv. vuzov USSR. Priborostroenie, 1967, no. 6(10), pp. 69–75. (in Russ.)
  33. Kachala N.N., Gorokhov V.A. Radiotekhnika, 1969, no. 7(24), pp. 46–50. (in Russ.)
  34. Kagan V.G., Usachev A.P. Elektrotekhnicheskaya promyshlennost'. Ser. Elektroprivod, 1981, no. 5(94), pp. 13–17. (in Russ.)
  35. Grigor'ev B.I.,Togatov V.V. Journal of Communications Technology and Electronics, 1986, no. 8(31), pp. 1645–1650. (in Russ.)
  36. Grigor'ev B.I., Zadiranov Yu.M., Korol'kov V.I., Rozhkov A.V. Semiconductors, 1986, no. 4(20), pp. 677–682. (in Russ.)
  37. Grigor'ev B.I. Semiconductors, 1987, no. 1(21), pp. 134–139. (in Russ.)
  38. Grigor'ev B.I. Technical Physics, 1987, no. 6(57), pp. 101–104. (in Russ.)
  39. Kuz'min V.A., Shveykin V.I. Journal of Communications Technology and Electronics, 1958, no. 10(3), pp. 1269–1273. (in Russ.)
  40. Rzhevkin K.S., Shveykin V.I. Journal of Communications Technology and Electronics, 1959, no. 7(4), pp. 1164–1172. (in Russ.)
  41. Agakhanyan T.M. Poluprovodnikovye pribory i ikh primenenie (Semiconductor Devices and Their Application), 1963, no. 10, pp. 338–359. (in Russ.)
  42. Bingelis A. Izmerenie parametrov tranzistorov (Measuring the Parameters of Transistors), Proceedings of the Conference,1969, рр. 194–197. (in Russ.)
  43. Shveykin V.I. Journal of Communications Technology and Electronics, 1960, no. 7(5), pp. 1158–1164. (in Russ.)
  44. Shveykin V.I. Journal of Communications Technology and Electronics, 1961, no. 6(6), pp. 999–1009. (in Russ.)
  45. Chamberlain N.G., Roulston D. J. IEEE Trans. Electron Dеvices, 1976, no. 12(ED-23), pp. 1346–1348.
  46. Grigor'ev B.I., Rudskiy V.A., Togatov V.V. Journal of Communications Technology and Electronics, 1984, no. 2(29), pp. 370–377. (in Russ.)
  47. Grigor'ev B.I., Togatov V.V. Journal of Communications Technology and Electronics, 1980, no. 5(25), pp. 1063–1071. (in Russ.)
  48. Grigor'ev B.I., Togatov V.V. Journal of Communications Technology and Electronics, 1980, no. 5(25), pp. 1115–1116. (in Russ.)
  49. Grigor'ev B.I., Rudskiy V.A., Togatov V.V. Instruments and Experimental Techniques, 1981, no. 4, pp. 226–228. (in Russ.)
  50. Grigor'ev B.I., Zadiranov Yu.M., Korol'kov V.I., Rozhkov A.V. Semiconductors, 1986, no. 10(20), pp. 1897–1900. (in Russ.)
  51. Grigor'ev B.I., Savkin A.I., Togatov V.V. Journal of Communications Technology and Electronics, 1982, no. 4(27), pp. 799–883. (in Russ.)
  52. Grigor'ev B.I., Rezanov Yu.V., Semenov V.T. Elektronnaya tekhnika. Seriya 2. Poluprovodnikovye pribory, 1986, no. 2(181), pp. 42–47. (in Russ.)
  53. Nosov Yu.R., Petrosyants K.O., Shilin V.A. Matematicheskie modeli elementov integral'noy elektroniki (Mathematical Models of Elements of Integrated Electronics), Moscow, 1976, 304 р. (in Russ.)
  54. Goremyshev V.N., Grigor'ev B.I., Rezanov Yu.V. Elektronnaya tekhnika. Seriya 2. Poluprovodnikovye pribory, 1987, no. 1(186), pp. 51–55. (in Russ.)
  55. Grigor'ev B.I. Izv. vuzov. Priborostroenie, 2000, no. 4(43), pp. 35–39. (in Russ.)
  56. Vasil'ev A.B., Grigor'ev B.I. Izv. vuzov. Priborostroenie, 2000, no. 1–2(43), pp. 89–91. (in Russ.)
  57. Sharma B.L., Purohit R.K. Semiconductor Heterojunctions, Pergamon Press, 1974, 216 р.
  58. Grigor'ev B.I., Gritsevskiy E.A., Goremyshev V.N., Togatov V.V. Elektronnaya tekhnika. Seriya 4. Elektrovakuumnye i gazorazryadnye pribory, 1978, no. 4, pp. 119–123. (in Russ.)
  59. Grigor'ev B.I., Togatov V.V. Elektronnaya tekhnika. Seriya 4. Elektrovakuumnye i gazorazryadnye pribory, 1979, no. 3(72), pp. 125–128. (in Russ.)
  60. Grigor'ev B.I., Gritsevskiy E.A., Togatov V.V. Elektrotekhnicheskaya promyshlennost'. Preobrazovatel'naya tekhnika, 1980, no. 5(124), pp. 16–18. (in Russ.)
  61. Grigor'ev B.I., Gritsevskiy E.A., Goremyshev V.N., Togatov V.V. Instruments and Experimental Techniques, 1982, no. 3, pp. 201–203. (in Russ.)
  62. Grigor'ev B.I., Goremyshev V.N., Sosipatrov A.A. Elektronnaya tekhnika. Seriya 4. Elektrovakuumnye i gazorazryadnye pribory, 1984, no. 3(102), pp. 72–79. (in Russ.)
  63. Grigor'ev B.I., Goremyshev V.N., Sosipatrov A.A. Elektronnaya tekhnika. Seriya 4. Elektrovakuumnye i gazorazryadnye pribory, 1985, no. 2(107), pp. 43–47. (in Russ.)
  64. Borodin B.A., Lomakin V.M., Mokryakov V.V., Petukhov V.M., Khrulev A.K. Moshchnye poluprovodnikovye pribory. Tranzistory (Powerful Semiconductor Devices. Transistors), Moscow, 1985, 560 р. (in Russ.) 
  65. D'yakonov V.P. Power electronics, 2011, no. 3, pp. 18–28. (in Russ.)
Information © 2005-2024Scientific and Technical Journal «Priborostroenie».
Development by Department of Internet Solutions NRU ITMO © 2012 .
xHTML 1.0 Valid CSS3 Valid
Яндекс.Метрика