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12
Issue
vol 65 / December, 2022
Article

DOI 10.17586/0021-3454-2016-59-4-294-299

UDC 621.38

STATIONARY AMPLIFICATION REGIME OF POWER BIPOLAR TRANSISTOR MODULES

B. I. Grigoryev
ITMO University; Associate Professor, Department of Electronics


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Abstract. A relatively simple analytical model of current gain dependency on collector current of transistor module produced on the base of identical devices (Darlington pair) or different (complementary pair) types of conductivity is proposed. The operation conditions for the transistors constituting these modules are defined. The possibility to define a generalized electro-physical parameter of the emitter junction and the lifetime of minor charge carriers in the basic areas of input transistor modules is demonstrated. The developed model is presented in the form convenient for determination of static characteristics of other modules such as composite transistors with additional symmetry. Comparison of the theoretical results with experiments is carried out.
Keywords: transistor modules, Darlington pair, complementary pair, current gain, carrier lifetime in the base, injection efficiency

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