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9
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vol 63 / September, 2020
Article

DOI 10.17586/0021-3454-2017-60-11-1070-1076

UDC 535.016

FORMATION OF ANTIREFLECTION MICRORELIEF ON SILICON SURFACE IRRADIATED WITH NANOSECOND ITTERBIUM LASER

D. S. Polyakov
TMO University, Department of Laser Technologies and Instrumentation; Engineer


V. P. Veiko
ITMO University, Saint Petersburg, 197101, Russian Federation; Department Head


A. A. Shimko
RC „Optical and Laser Methods of Matter Researches“ SPbSU; Leading Specialist


N. M. Salnikov
ITMO University, Department of Laser Systems and Technologies; Student


A. A. Mikhaylova
RC „Optical and Laser Methods of Matter Researches“ SPbSU; Specialist


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Abstract. Specifics of morphology of microrelief formed on monocrystalline silicon surface under the action of series of nanosecond laser pulses of ytterbium fiber laser with intensities close to melting threshold are studied. It is shown that at multi-pulse irradiation the relief consist of micro cones with surface concentration depending on laser power density. The obtained microrelief has antireflective properties and its formation leads to decreasing of full reflection coefficient for 3—4 times in comparison with initial value.
Keywords: monocrystalline silicon, fiber laser, nanosecond laser pulses, micro cones, antireflective microrelief

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