ISSN 0021-3454 (print version)
ISSN 2500-0381 (online version)

vol 63 / February, 2020

DOI 10.17586/0021-3454-2019-62-2-142-149

UDC 535.212


V. Y. Khramov
ITMO University; Professor

S. V. Gagarsky
ITMO University, Saint Petersburg, 197101, Russian Federation; leading engineer

A. N. Sergeev
ITMO University, Saint Petersburg, 197101, Russian Federation; assistant

R. M. Akhmadullin
ITMO University, Department of Laser Technologies and Systems;

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Abstract. Several features of HfO2/SiO2 and Ta2O5/SiO2 coatings deposited on absorbing substrate of single-crystal silicon carbide (SiC) are revealed to cause a decrease in their laser-induced damage threshold. It has been experimentally shown that in the presence of transverse micro displacement of the beam during the measurements, the radiation strength of the sample decreases in 2–3 times. Using the heat transfer equation and the finite element method in the CAE (computer-aided engineering) system, the effects of laser radiation with transverse beam displacement is simulated, and the dynamics of temperature changes and induced thermal stresses inside the samples are evaluated.
Keywords: laser induced damage of reflecting mirrors, dielectric coatings, absorbing substrate, laser induced damage threshold, monocrystalline silicon carbide, thermal stress

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