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vol 63 / July, 2020
Article

DOI 10.17586/0021-3454-2019-62-10-929-940

UDC 621.382.233

MODELING OF RESONANT-TUNNELING DIODES I-V CHARACTERISTICS KINETICS UNDER DESTABILIZING FACTORS INFLUENCE

K. V. Cherkasov
Bauman Moscow State Technical University, Department of Radio-Electronic Systems and Devices;


S. A. Meshkov
Bauman Moscow State Technical University, Department of Instrument-Making Technologies;


M. O. Makeev
Bauman Moscow State Technical University, Department of Instrument-Making Technologies;


Y. . Ivanov
M. V. Lomonosov Moscow State University; student


N. A. Vetrova
Bauman Moscow State Technical University, Department of Instrument-Making Technologies;


N. V. Fedorkova
Bauman Moscow State Technical University, Department of Instrument-Making Technologies;


Abstract. Resonant tunnel diodes (RTD) are promising elements for use in microwave and HF transceivers, in particular, in nonlinear frequency converters of radio signals. The use of RTD as nonlinear elements allows to improve the performance of the converters, as well as to expand the operating frequency range up to terahertz. The kinetics of RTD volt-ampere characteristic at specified operating conditions under the influence of high temperature and ionizing radiation is studied. Mathematical models describing degra-dation of the RTD volt-ampere characteristic under the effects are developed. The obtained models are used as a basis of a software package that allows to simulate the kinetics of RTD volt-ampere character-istic caused by the action of above factors. The simulation results are compared with experimental data.
Keywords: resonant tunnel diode, kinetic of volt-ampere characteristic, ionizing radiation, high temperature, computer modeling, GaAs/AlGaAs resonant-tunneling heterostructures

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