ISSN 0021-3454 (print version)
ISSN 2500-0381 (online version)
Menu

7
Issue
vol 63 / July, 2020
Article

DOI 10.17586/0021-3454-2020-63-1-61-69

UDC 621.791.35/37

METHODS FOR MOUNTING CRYSTALS IN THE SILICON TRANSISTOR STRUCTURES PRODUCTION

T. A. Ismailov
; Rector Dagestan state technical university


A. R. Shakhmayeva
Dagestan State Technical University;


B. A. Shangereeva
Dagestan State Technical University;


T. E. Sarkarov
Dagestan State Technical University;


Read the full article 

Abstract. Various methods of attaching crystals to semiconductor device housings are presented. The quality of solder contacts depends significantly on the formation of connections between the solder components and the metal coating. For soldering silicon crystals, POS-5 solder is used, which corresponds to the melting temperature and a narrow temperature range of solidification, which ensures that there is no shrinkage porosity in the solder joint. Results of tests of POS-5 alloy wire on solderability of transistor structure crystals are presented.
Keywords: crystal, defect, frame, solder, alloy, soldering, device, drop, substrate

References:
  1. Kolpakov A. Components & Technologies, 2007, no. 5, pp. 97–102. (in Russ.)
  2. Kolpakov A. Components & Technologies, 2007, no. 4, pp. 116–119. (in Russ.)
  3. Lanin V. Technologies in Electronic Industry, 2010, no. 4, рр. 27–31. (in Russ.)
  4. Aliev Sh.D., Shakhmaeva A.R., Shangereeva B.A. Sbornik tezisov dokladov XXIV itogovoy nauchnoy tekhnicheskoy konferentsii prepodavateley, sotrudnikov, aspirantov i studentov DGTU (Collection of Abstracts of the XXIV Final Scientific Technical Conference of Teachers, Employees, Graduate Stu-dents and Students of DSTU), 21–24 April 2003, Makhachkala, рр. 87. (in Russ.)
  5. Ismailov T.A., Aliev Sh.D., Shakhmaeva A.R., Shangereeva B.A. Izmereniye, kontrol', informatizatsiya (Measurement, Control, Informatization), Proceedings of the Scientific and Practical Conference, Barnaul, 2004, рр. 55–56. (in Russ.)
  6.  Patent 2005141101/28 RU, H01L 21/58, Sposob posadki kremniyevogo kristalla na osnovaniye kor-pusa (Method of Planting a Silicon Crystal on the Base of the Housing), Ismailov T.A., Shakhmaeva A.R., Shangereeva B.A. Priority 27.12.05, Published 10.12.09, Bulletin 34. (in Russ.)
  7. Ismailov T.A., Shakhmayeva A.R. Tranzistornyye struktury silovoy elektroniki (Power Transistor Struc-tures), St. Petersburg, 2011, 125 р. (in Russ.)
  8. Harding W. Plating, 1965, no. 10, pp. 687.
  9. Lanin V.L., Khmyl' A.A. Nerazrushayushchiy kontrol' i sistemy upravleniya kachestvom svarnykh i payanykh soyedineniy (Non-Destructive Testing and Quality Management Systems for Welded and Soldered Joints), Workshop materials, Moscow, 1992. (in Russ.)
  10. Hansen M., Anderko K. Constitution of Binary Alioys, NY, Mc Graw-Hill, 1958.
  11. Elliott R.P. Constitution of Binary Alloys, First Supplement, NY, McGraw-Hill, 1965.
  12. Yakovlev G.A. Payka materialov pripoyami na osnove svintsa (Lead-Based Soldering), Moscow, 1978. (in Russ.)
  13. Lashko S.V., Lashko N.F. Payka metallov (Metal Soldering), Moscow, 1988, 376 р. (in Russ.)
  14. Zenin V.V., Ryaguzov A., Boyko V., Galtsev V., Fomenko Yu. Technologies in Electronic Industry, 2005, no. 2005, рр. 46–51. (in Russ.)
  15. Gruyev I.D., Matveyev N.I., Sergeyeva N.G. Elektrokhimicheskiye pokrytiya izdeliy elektronnoy appa-ratury: Spravochnik (Electrochemical Coatings of Electronic Equipment: Reference), Moscow, 1988, 304 р. (in Russ.)
  16. Zenin V.V., Bokarev D.I., Segal Yu.E., Fomenko Yu.L. Petersburg Electronic Journal, 2002, no. 4, рр. 36–44. (in Russ.)
  17. Certificate of authorship SU 1640210 A1 C25 D 3/12, Elektrolit nikelirovaniya (Nickel Plating Electro-lyte), Kushner D.K., Dostanko A.P., Khmyl' A.A., Kozintsev S.I., Kacherovskaya F.B., Published 07.04.91, Bulletin 13. (in Russ.)
  18. Parfenov А. Technologies in Electronic Industry, 2008, no. 2, рр. 46–52. (in Russ.)