Abstract. The possibility of constructing combined sensors based on silicon photoelectronic multipliers is analyzed. The influence of temperature and supply voltage of silicon photoelectronic multipliers on changes in dark current, sensitivity to optical radiation and critical illumination is investigated. An installation for carrying out the research under consideration is proposed. Experimental samples of Si-photomultiplier tubes (Si-PMTs) with a p+-p-n+ structure produced by JSC Integral (Republic of Belarus), as well as serially produced silicon photomultipliers Ketek PM 3325 and ON Semi FC 30035 are studied. It is shown that the temperature dependence of the dark current for these Si-PMTs has a linear form. The temperature increase is found to decrease the sensitivity of silicon photomultiplier tubes to optical radiation. The value of the critical illumination for Si-PMT is shown to increase with increasing temperature. Based on results of the performed studies, a structure of combined sensor based on silicon photomultiplier tube is proposed, allowing for simultaneous control over the two parameters, temperature and illumination. Main characteristics of this sensor are evaluated.

Keywords: combined sensor, silicon photomultiplier tube, dark current, critical illumination, temperature

References:

1. Ivanov V.M. Intellektual'nyye sistemy (Intelligent Systems), Ekaterinburg, 2015, 92 р. (in Russ.)
2. Ostroukh A.V., Surkova N.E. Intellektual'nyye informatsionnyye sistemy i tekhnologii (Intelligent Information Systems and Technologies), Krasnoyarsk, 2015, 370 р. (in Russ.)
3. Davidović B., Labus A. Electronics and Energetics, 2016, no. 3(29), pp. 451–460, DOI: 10.2298/FUEE1603451D.
4. Gunawan T.S., Yaldi I.R.H., Kartiwi M., Ismail N., Za’bah N.F., Mansor H., Nordin A.N. Indonesian Journal of Electrical Engineering and Computer Science, 2017, no. 1(7), pp. 107–115, DOI: 10.11591/ijeecs.v7.i1.pp107-115.
5. Rychkova V.A. Herald of Science and Education, 2019, no. 4(58), pt. 2, pp. 31–34. (in Russ.)
6. Nguyen Xuan Manh, Popov G.A. Engineering Journal of Don, 2015, no. 3(37), pp. 31. (in Russ.)
7. Baigozin D.V., Pervukhin D.N., Zakharova G.B. Bulletin of The Tomsk Polytechnic University, 2008, no. 5(313), pp. 168–172. (in Russ.)
8. Myasoedov Yu.V., Savina N.V. Intellektualizatsiya sistem elektrosnabzheniya gorodov (Intellectualization of City Power Supply Systems), Blagoveshchensk, 2017, 164 р. (in Russ.)
9. Ricquebourg V., Menga D., Durand D., Marhic B., Delahoche L. and Loge C. 2006 1ST IEEE International Conference on E-Learning in Industrial Electronics, 2006, pp. 23–28, DOI: 10.1109/ICELIE.2006.347206.
10. Hancke G.P., de Carvalho e Silva B. and Hancke G.P. Jr. Sensors, 2013, vol. 13, рр. 393–425, DOI:10.3390/s130100393.
11. Berntzen L., Johannessen M.R., Florea A. The 5th International Conference on Smart Cities, Systems, Devices and Technologies, 2016, pp. 31–36.
12. Asayonak M.A., Zеnevich A.О., Kochergina O.V., Novikov E.V. Problemy infokommunikatsiy, 2020, no. 2(12), pp. 41–46. (in Russ.)
13. Gulakov I.R., Zenevich A.O. Fotopriyemniki kvantovykh system (Photodetectors of Quantum Systems), Minsk, 2012, 276 р. (in Russ.)