DOI 10.17586/0021-3454-2025-68-5-417-426
UDC 621.793.182
CREATION OF THIN-FILM MULTILAYER STRUCTURES BY MAGNETRON SPUTTERING AND THEIR ELEMENTAL ANALYSIS
Volga State University of Technology, Department of Radio Equipment Design and Production ; Associate Professor
N. I. Sushentsov
Volga State University of Technology; Department head, Associate professor
A. D. Dyachkov
Volga State University of Technology, Department of Radio Equipment Design and Production ;
A. L. Romanov
Volga State University of Technology, Department of Radio Equipment Design and Production;
. A. Volkov
Volga State University of Technology, Department of Radio Equipment Design and Production ;
P. G. Gabdullin
Peter the Great St. Petersburg Polytechnic University, Higher School of Engineering and Physics, Institute of Electronics and Telecommunications ; PhD, Associate Professor
O. . Kvashenkina
SNDGroup ; General Manager
Reference for citation: Shashin D. E., Sushentsov N. I., Dyachkov A. D., Romanov A. L., Volkov K. A., Gabdullin P. G., Kvashenkina O. E. Creation of thin-film multilayer structures by magnetron sputtering and their elemental analysis. Journal of Instrument Engineering. 2025. Vol. 68, N 5. P. 417–426 (in Russian). DOI: 10.17586/0021-3454-2025-68-5-417-426.
Abstract. The process of formation of a multilayer Al-Ni structure by the magnetron sputtering method used for the reaction of self-propagating high-temperature synthesis is considered. The magnetron sputtering system arrangement is proposed, which allows using six magnetrons and an ion source in a single technological cycle of formation of a multilayer Al-Ni structure, which leads to an increase in the rate of its growth. A sample of the obtained Al-Ni structure is studied using scanning electron microscopy. It is shown that the sample has a thickness of 50 μm, the thickness of one bilayer is 80 nm. The results of studying the obtained structures using Auger spectroscopy and scanning electron microscopy are presented, and an elemental analysis of the formed multilayer structure is carried out.
Abstract. The process of formation of a multilayer Al-Ni structure by the magnetron sputtering method used for the reaction of self-propagating high-temperature synthesis is considered. The magnetron sputtering system arrangement is proposed, which allows using six magnetrons and an ion source in a single technological cycle of formation of a multilayer Al-Ni structure, which leads to an increase in the rate of its growth. A sample of the obtained Al-Ni structure is studied using scanning electron microscopy. It is shown that the sample has a thickness of 50 μm, the thickness of one bilayer is 80 nm. The results of studying the obtained structures using Auger spectroscopy and scanning electron microscopy are presented, and an elemental analysis of the formed multilayer structure is carried out.
Keywords: magnetron sputtering, self-propagating high-temperature synthesis, Auger spectroscopy, electron microscopy, elemental analysis
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