ISSN 0021-3454 (print version)
ISSN 2500-0381 (online version)
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3
Issue
vol 60 / MARCH, 2017
Article
UDC 621.317.7.027.3; 621.319.027.3

THEORY OF ULTRASPEED SWITCHDOWN OF MOP-TRANSISTORS

V. . Togatov
St. Petersburg State University of Information Technologies, Mechanics and Optics; Professor


P. . Gnatyuk
St. Petersburg State University of Information Technologies, Mechanics and Optics; Research engineer, Applicant


D. . Ternovsky
St. Petersburg State University of Information Technologies, Mechanics and Optics; Postgraduate


Abstract. Regime of ultraspeed switchdown of high-voltage MOP-transistor with a switching time no greater than several nanoseconds is studied theoretically. A mathematical model and explanation of the ultraspeed process is proposed. The theoretical conclusions are confirmed by results of direct experiments.
Keywords: MOP-transistor, high-voltage technique, pulse work, nanosecond range technique.