METHOD OF REVERSE RANDOM SAMPLING FOR MEASUREMENT OF TIME DELAY IN ELEMENT OF THE INTEGRATED CIRCUIT WITH PICOSECOND ACCURACY
ITMO University; Postgraduate
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Abstract. A new method of propagation delay measurement in micro- and nanostructures is described. The method makes it possible to observe the propagation time delay in a single element of standard-cell library and is accurate to better than 1 picoseconds.
Keywords:
random-sampling standard cell characterization, phase error accumulation methodology, gate propagation delay, high precision on-chip measurement, signal processing, BIST, DFT, memory, processor testing, MEMS testing.
