ISSN 0021-3454 (print version)
ISSN 2500-0381 (online version)
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vol 67 / February, 2024
Article

DOI 10.17586/0021-3454-2021-64-3-219-225

UDC 681.586

ANALYSIS OF THE PROCESS OF THIN FILM DEPOSITION IN VACUUM CHAMBERS BY HiPIMS METHOD

V. L. Tkalich
ITMO University; Professor


N. S. Potemina
ITMO University, Saint Petersburg, 197101, Russian Federation; tutor


A. G. Korobeynikov
Saint Petersburg Branch Organization of the Russian Academy of Sciences “Institute of Earth Magnetism, Ionosphere and Radio waves named after N.V. Pushkov RAS”;ITMO University, Saint Petersburg, 197101, Russian Federation ; Deputy Director for Science


O. I. Pirozhnikova
ITMO University; Ph.D.


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Abstract. The problem of developing a domestic reliable element base of micro-system technology, in which thin films are widely used in the creation of microelectromechanical systems, is considered. At present, magnetron sputtering methods are actively used to obtain thin films in vacuum chambers in a gas discharge. Such methods include the HiPIMS method. A stand is created for analyzing a gas discharge and a probe, which allows obtaining data for plotting the current-voltage characteristics of this discharge. A software developed in the MatLab environment made it possible to correctly process the obtained volt-ampere characteristics. Parameters influencing the mode of magnetron spraying (changes in voltage, pulse, pulse frequency and on-off time ratio) are established to make it possible to control over the process of thin films spraying and increase the percentage of yield of suitable product samples.
Keywords: thin films deposition, magnetron sputtering, HiPIMS method, CVC, concentration of charge carriers, discharge voltage, duty cycle, pulse frequency

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