ISSN 0021-3454 (print version)
ISSN 2500-0381 (online version)
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9
Issue
vol 60 / SEPTEMBER, 2017
Article
UDC 543.422.25

SOME PROPERTIES OF SILICON STRUCTURES, RECEIVED BY LASER MICROSTRUCTURIZATION

A. M. Skvortsov
ITMO University, 197101, Saint Petersburg, Russian Federation; Professor


Дышловенко С. С.
;


Погумирский М. В.
;


Соколов В. И.
;


Abstract. The influence of laser microstructurization of mono-crystal silicon on morphological and optical properties of the irradiated zones is considered. There are very compound changes of structure on the surface of irradiated zone of silicon, accompanied the morphotropy of silicon and the formation of nanoclusters. At the same time the change of transmission coefficient of irradiated zone of silicon surface was found, that means the change of optical properties of silicon.
Keywords: laser microstructurization, irradiated zones, silicon nanocluster, transmission coefficient.