ELLIPSOMETRY OF INHOMOGENEOUS SURFACE LAYERS OF ANISOTROPICAL OPTICAL ELEMENTS
Университет ИТМО, кафедра твердотельной оптоэлектроники; аспирант
I. A. Khramtsovsky
ITMO University, Saint-Petersburg, 197101, Russia; leading engineer
Иванов В. Ю.
Университет ИТМО, кафедра твердотельной оптоэлектроники; аспирант
Федоров И. С.
Университет ИТМО, кафедра твердотельной оптоэлектроники; аспирант
Туркбоев А. .
Университет ИТМО; профессор кафедры ТТОЭ
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Abstract. Methods of definition of elements of the normalized matrix of reflection and the basic ellipsometry parameters of anisotropical reflecting systems are presented. The experimental-theoretical substantiation of application of ellipsometry generalized equations in Drude — Born approach is given at definition of optical characteristics of non-uniform superficial layers of anisotropical elements of optoelectronics. It is shown, that at polishing and ionic processing of crystal quartz it is formed amorpheous layer which presence leads to losses of optical radiation.
Keywords:
ellipsometry, optical connections, optoelectronic elements, anisotropical optical elements.
