ISSN 0021-3454 (print version)
ISSN 2500-0381 (online version)
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8
Issue
vol 60 / AUGUST, 2017
Article
UDC 535.51

ELLIPSOMETRY OF INHOMOGENEOUS SURFACE LAYERS OF ANISOTROPICAL OPTICAL ELEMENTS

Новиков А. А.
Университет ИТМО, кафедра твердотельной оптоэлектроники; аспирант


I. A. Khramtsovsky
ITMO University, Saint-Petersburg, 197101, Russia; leading engineer


Иванов В. Ю.
Университет ИТМО, кафедра твердотельной оптоэлектроники; аспирант


Федоров И. С.
Университет ИТМО, кафедра твердотельной оптоэлектроники; аспирант


Туркбоев А. .
Университет ИТМО; профессор кафедры ТТОЭ


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Abstract. Methods of definition of elements of the normalized matrix of reflection and the basic ellipsometry parameters of anisotropical reflecting systems are presented. The experimental-theoretical substantiation of application of ellipsometry generalized equations in Drude — Born approach is given at definition of optical characteristics of non-uniform superficial layers of anisotropical elements of optoelectronics. It is shown, that at polishing and ionic processing of crystal quartz it is formed amorpheous layer which presence leads to losses of optical radiation.
Keywords: ellipsometry, optical connections, optoelectronic elements, anisotropical optical elements.