Abstract. Projection laser irradiation method is applied for formation of regular array of silicon nanoclusters within SiO2 layer on silicon substrate. Pulsed fiber YLP laser with the wavelength of 1.06 μm is used as radiation source. Metal micro grid was introduced for laser beam splitting, and the resulting elementary beams are focused at oxidized silicon substrate with oxide thickness of 100 nm by objective lens. Density of silicon clusters in the array is shown to depend on the micro grid cells size. Threshold laser power is determined, and excess of the threshold is found to result in formation of a regular array of silicon nanocluster within the oxidized layer of silicon substrate. The clusters size increases and deformed areas arise around the clusters with further increase in laser power.

Keywords: nanocluster, nanocrystal, nanoelectronics, laser clusterization.