ISSN 0021-3454 (print version)
ISSN 2500-0381 (online version)
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9
Issue
vol 60 / SEPTEMBER, 2017
Article
UDC 681.2:535.8

APPLICATION OF PROTECTIVE ANTIREFLECTION COATING ON SEMICONDUCTOR HETEROSTRUCTURE IN THE UVА RANGE

V. S. Ermolaev
ITMO University, Department of Laser Technologies and Systems; Engineer


V. M. Volynkin
Scientific Research and Technological Institute of Optical Materials, S. I. Vavilov State Optical Institute All-Russian Center, St. Petersburg;


D. S. Kovalev
Energy UV ltd., Vsevolozhsk, Leningrad Region; Junior Scientist


B. P. Papchenko
ITMO University; Head of Scientific and Technical Department


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Abstract. The possibility of applying a protective antireflective coating on semiconductor heterostructure surface in the UVА range is examined. It is shown that a specially prepared solution based on standard epoxy-54 EC makes it possible to obtain layers without a significant change in the volume (less than 1 %), as well as reduce losses of radiation generated by the semiconductor structure by 11 %.
Keywords: UVА range, semiconductor heterostructures, antireflecting coating