APPLICATION OF PROTECTIVE ANTIREFLECTION COATING ON SEMICONDUCTOR HETEROSTRUCTURE IN THE UVА RANGE
ITMO University, Department of Laser Technologies and Systems; Engineer
V. M. Volynkin
JSC S.I. Vavilov State Optical Institute, Saint Petersburg, 192171, Russian Federation; Leading Researche
D. S. Kovalev
Energy UV ltd., Vsevolozhsk, Leningrad Region; Junior Scientist
B. P. Papchenko
ITMO University; Head of Scientific and Technical Department
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Abstract. The possibility of applying a protective antireflective coating on semiconductor heterostructure surface in the UVА range is examined. It is shown that a specially prepared solution based on standard epoxy-54 EC makes it possible to obtain layers without a significant change in the volume (less than 1 %), as well as reduce losses of radiation generated by the semiconductor structure by 11 %.
Keywords:
UVА range, semiconductor heterostructures, antireflecting coating
