LASER-INDUCED SILICON SURFACE STRUCTURING FOR SOLAR CELL APPLICATION
Institute on Laser and Information Technologies RAS; Post-Graduate Student
O. D. Khramova
Institute on Laser and Information Technologies RAS; Senior Scientist
V. V. Rocheva
Institute on Laser and Information Technologies RAS; Junior Scientist
D. A. Zuev
Institute on Laser and Information Technologies RAS; Post-Graduate Student
O. A. Novodvorsky
Institute on Laser and Information Technologies RAS; Senior Scientist, Head of Laboratory
A. A. Lotin
Institute on Laser and Information Technologies of the Russian Academy of Sciences – Branch of Federal Scientific Research Center “Crystallography and Photonics” of the Russian Academy of Sciences, Shatura, Moscow region, 149700, Russian Federation; Deputy Director for Science
L. S. Parshina
Institute on Laser and Information Technologies RAS; Junior Scientist;
A. Y. Poroykovr
Skobeltsyn Institute of Nuclear Physics of Moscow State University; Leading Electronic Engineer
M. A. Timofeev
Skobeltsyn Institute of Nuclear Physics of Moscow State University;; Leading Scientist
G. G. Untila
Skobeltsyn Institute of Nuclear Physics of Moscow State University;; Senior Scientist
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Abstract. Creation of laser-induced morphology features of the c-Si and mc-Si with the use of 532 nm Nd: YAG laser nanosecond pulses in vacuum and СО2 atmosphere is investigated. Specimens of 20×20 mm laser-textured mc-Si wafers with typical pillar array structures of aspect ratio (depth to width) greater than or equal to 3 and weighted effective reflectance below 3 % are obtained.
Keywords:
multicrystalline silicon, laser texturing, solar cells.
