HIGH-POWER CW SOURCE OF EXTREME VUV RADIATION FOR PROCESSING OF SEMICONDUCTOR MATERI
Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences;
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Abstract. Application of existing sources of CW extreme VUV radiation is restricted by their large size, low efficiency, high cost, and small irradiated area. A novel type of arc-discharge source of extreme VUV radiation (75—10 nm) with the power of ~ 10 kW and efficiency of ~ 10 % (at least for the range of 70—30 nm) is described. The new sources are easy to manufacture; they have a lifetime of about 1000 h and are capable of irradiating samples with total surface area of ~ 0,1—1 m2.
Keywords:
extreme VUV radiation, arc-discharge plasma, exciting of ion levels.
