IN SITU ELLIPSOMETRY OF GROWING MCT-BASED NANOSCALE HETEROSTRUCTURES
Institute of Semiconductor physics, Siberian Branch, Russian Academy of Sciences, Department of Physics;
S. V. Rykhlitskii
Institute of Semiconductor physics, Siberian Branch, Russian Academy of Sciences, Laboratory of Ellipsometry;
E. V. Spesivtsev
Institute of Semiconductor physics, Siberian Branch, Russian Academy of Sciences, Laboratory of Ellipsometry;
N. N. Mikhailov
Institute of Semiconductor physics, Siberian Branch, Russian Academy of Sciences, Laboratory of Epitaxy from Molecular Beams of Connections А2В6;
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Abstract. Development of ellipsometric instrumentation is reviewed, and analysis of data of in situ ellipsometry of CdxHg1-xTe structures during molecular beam epitaxy is presented. An automatic ellipsometer adapted for the measurements is developed on the base of static optical scheme. A high operation speed allows application of the ellipsometer to technological control during structure growth. Experimental results and numerical calculations are presented demonstrate applicability to growth of layered nanostructures of homogeneous layers as well as of layers with assigned distribution of composition across the layer thickness.
Keywords:
ellipsometry, in situ control, molecular beam epitaxy, nanostructure, MCT.
