ISSN 0021-3454 (print version)
ISSN 2500-0381 (online version)
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vol 64 / May, 2021
Article

DOI 10.17586/0021-3454-2015-58-8-664-669

UDC 621.373.535

THERMALISATION OF ELECTRON GAS AND THE ROLE OF SATURATION OF INTERBAND ABSORPTION UNDER THE ACTION OF FEMTOSECOND LASER PULSE IN SEMICONDUCTORS AND DIELECTRICS

Y. B. Yakovlev
ITMO University, Saint Petersburg, 197101, Russian Federation; Professor


D. S. Polyakov
TMO University, Department of Laser Technologies and Instrumentation; Engineer


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Abstract. Evolution of energy distribution function for photo-excited charge carriers In a semiconductor and dielectric under the action of femtosecond laser pulse is analyzed. The consideration is based on Boltzmann kinetic equation for the carriers with due regard for the effects of interzone absorption as well as intra-zone absorption and collision relaxation. Thermalisation time for photo-excited electrons is estimated. The influence of saturation of interband absorption on concentration of free electrons is studied. Dependence of concentration of photo-excited electrons on energy density in incident femtosecond laser radiation.  
Keywords: femtosecond pulse, thermalisation time, saturation of interband absorption, dielectric, semiconductor, laser radiation action