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vol 67 / October, 2024 Article

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DOI 10.17586/0021-3454-2016-59-2-95-106
UDC 621.38

THE STATE AND PROSPECTS OF FURTHER DEVELOPMENT OF THEORY OF POWER BIPOLAR TRANSISTORS

B. I. Grigoryev
ITMO University; Associate Professor, Department of Electronics


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Abstract. The main stages of transition from early samples of Germanium alloy transistors to modern superpower bipolar Silicon transistors are reviewed. The state of theory of the semiconductor device performance and model notion of their output characteristics are analyzed. Perspective types and classes of the transistors on the base of Silicon and wide-band-gap materials are specified. Information about n ondestructive methods and means for measurement of electro physical parameters in bipolar transistor structures aimed at development of controllable technology of the transistors are presented. Analysis of equipment used for measurement output characteristics of the transistors, including super-powerful, and able to itch pulse power up to 1 megawatt is carried out. Basic problems related to the task of creation of power bipolar transistors with qualitatively superior set of output characteristics are formulated, approaches to the problems solutions are envisaged.
Keywords: силовые биполярные транзисторы, фотонно-инжекционные транзисторы, методы измерения

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