ISSN 0021-3454 (print version)
ISSN 2500-0381 (online version)
Menu

4
Issue
vol 67 / April, 2024
Article

DOI 10.17586/0021-3454-2016-59-4-328-330

UDC 621.38

CURRENT GAIN FOR A COMPOSITE BIPOLAR TRANSISTOR WITH ADDITIONAL SYMMETRY

B. I. Grigoryev
ITMO University; Associate Professor, Department of Electronics


Read the full article 

Abstract. Using transistor modules from devices with different types of conductivity (composite-based transistors with additional symmetry) as the examples, general applicability of the existing model for calculation of the ratio of the current gain to collector current is confirmed.
Keywords: composite bipolar transistor, transistor module, current gain, collector current, input transistor, output transistor

References:
  1. Opadchiy Yu.F., Gludkin O.P., Gurov A.I. Analogovaya i tsifrovaya elektronika (Analog and Digital Electronics), Moscow, 2002, 768 p. (in Russ.)
  2. Nogin V.N. Analogovye elektronnye ustroystva (Analog Electronic Devices), Moscow, 1992, 300 p. (in Russ.)
  3. Grigor'ev B.I. Izv. vuzov. Priborostroenie, 2016, no. 4(59), pp. 294–299. (in Russ.)
  4. Grigor'ev B.I. Izv. vuzov. Priborostroenie, 2015, no. 5(58), pp. 372–379. (in Russ.)