DOI 10.17586/0021-3454-2018-61-10-915-921
UDC 546.28.004
RESEARCH OF SILICON SURFACE ETCHED IN POTASSIUM HYDROXIDE SOLUTION
JSC Research Institute of Physical Measurements; Chief Specialist
F. A. Abdullin
JSC Research Institute of Physical Measurements; Design Engineer
I. R. Vergazov
JSC Research Institute of Physical Measurements; Chief Specialist
A. E. Mishanin
JSC Research Institute of Physical Measurements; Leading Process Engineer
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Abstract. The influence of the depth of anisotropic etching of silicon in KOH solution on the surface roughness is studied experimentally. Wire etching of silicon wafers at various depths was followed by measurement of roughness parameters with the PF-60 optical profilograph. It is shown that such parameters of surface roughness as Ra, Rz, Rmax vary with the depth. To improve the surface quality and reduce the above parameters, chemical polishing in an isotropic etchant was used. It is argued that the studies carried out have practical significance for the manufacture of silicon structures of micromechanical systems.
Keywords: micromechanical sensors, anisotropic etching, surface roughness, chemical polishing, hydromechanical conditions
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