ISSN 0021-3454 (print version)
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11
Issue
vol 67 / November, 2024
Article

DOI 10.17586/0021-3454-2020-63-1-61-69

UDC 621.791.35/37

METHODS FOR MOUNTING CRYSTALS IN THE SILICON TRANSISTOR STRUCTURES PRODUCTION

T. A. Ismailov
; Rector Dagestan state technical university


A. R. Shakhmayeva
Dagestan State Technical University;


B. A. Shangereeva
Dagestan State Technical University;


T. E. Sarkarov
Dagestan State Technical University;


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Abstract. Various methods of attaching crystals to semiconductor device housings are presented. The quality of solder contacts depends significantly on the formation of connections between the solder components and the metal coating. For soldering silicon crystals, POS-5 solder is used, which corresponds to the melting temperature and a narrow temperature range of solidification, which ensures that there is no shrinkage porosity in the solder joint. Results of tests of POS-5 alloy wire on solderability of transistor structure crystals are presented.
Keywords: crystal, defect, frame, solder, alloy, soldering, device, drop, substrate

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