THEORY OF ULTRASPEED SWITCHDOWN OF MOP-TRANSISTORS
St. Petersburg State University of Information Technologies, Mechanics and Optics; Professor
P. . Gnatyuk
St. Petersburg State University of Information Technologies, Mechanics and Optics; Research engineer, Applicant
D. . Ternovsky
St. Petersburg State University of Information Technologies, Mechanics and Optics; Postgraduate
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Abstract. Regime of ultraspeed switchdown of high-voltage MOP-transistor with a switching time no greater than several nanoseconds is studied theoretically. A mathematical model and explanation of the ultraspeed process is proposed. The theoretical conclusions are confirmed by results of direct experiments.
Keywords:
MOP-transistor, high-voltage technique, pulse work, nanosecond range technique.
