ISSN 0021-3454 (print version)
ISSN 2500-0381 (online version)
Menu

10
Issue
vol 67 / October, 2024
Article

DOI 10.17586/0021-3454-2021-64-3-219-225

UDC 681.586

ANALYSIS OF THE PROCESS OF THIN FILM DEPOSITION IN VACUUM CHAMBERS BY HiPIMS METHOD

V. L. Tkalich
ITMO University; Professor


N. S. Potemina
ITMO University, Saint Petersburg, 197101, Russian Federation; tutor


A. G. Korobeynikov
Saint Petersburg Branch Organization of the Russian Academy of Sciences “Institute of Earth Magnetism, Ionosphere and Radio waves named after N.V. Pushkov RAS”;ITMO University, Saint Petersburg, 197101, Russian Federation ; Deputy Director for Science


O. I. Pirozhnikova
ITMO University; Ph.D.


Read the full article 

Abstract. The problem of developing a domestic reliable element base of micro-system technology, in which thin films are widely used in the creation of microelectromechanical systems, is considered. At present, magnetron sputtering methods are actively used to obtain thin films in vacuum chambers in a gas discharge. Such methods include the HiPIMS method. A stand is created for analyzing a gas discharge and a probe, which allows obtaining data for plotting the current-voltage characteristics of this discharge. A software developed in the MatLab environment made it possible to correctly process the obtained volt-ampere characteristics. Parameters influencing the mode of magnetron spraying (changes in voltage, pulse, pulse frequency and on-off time ratio) are established to make it possible to control over the process of thin films spraying and increase the percentage of yield of suitable product samples.
Keywords: thin films deposition, magnetron sputtering, HiPIMS method, CVC, concentration of charge carriers, discharge voltage, duty cycle, pulse frequency

References:
  1. Antonenko S.V. Tekhnologiya tonkikh plenok (Thin Film Technology) Moscow, 2008, 104 р. (in Russ.)
  2. Berlin E., Dvinin S., Seidman L. Vakuumnaya tekhnologiya i oborudovaniye dlya naneseniya i travleniya tonkikh plenok (Vacuum Technology and Equipment for the Deposition and Etching of thin Films), Moscow, 2007. (in Russ.)
  3. Anufriyev L.P. Tekhnologiya integral'noy elektroniki (Integrated Electronics Technology), Minsk, 2011, 379 р. (in Russ.)
  4. Shupenev А.Е. BMSTU Journal of Mechanical Engineering, 2019, no. 4(709), pp. 18–27. (in Russ.)
  5. Chu Trong Su, Journal of the Russian Universities. Radioelectronics, 2016, no. 6, pp. 22–31. (in Russ.)
  6. Ehiasarian A.P. Plasma Surface Engineering Research and its Practical Applications, Trivandrum, Research Signpost, 2008, pp. 35–87. ISBN 978-81-308-0257-2.
  7. Grishentsev A.Yu., Korobeynikov A.G. Scientific and Technical Journal of Information Technologies, Mechanics and Optics, 2011, no. 2(72), pp. 109–113. (in Russ.)
  8. Korobeynikov A.G., Kutuzov I.M., Kolesnikov P.Yu. Kibernetika i programmirovaniye, 2012, no. 1, pp. 31–37. (in Russ.)
  9. Kalinkina M.E., Korobeynikov A.G., Konovalov N.Yu., Pirozhnikova O.I., Tkalich V.L., Shmakov N.A. Scientific and Technical Volga region Bulletin, 2019, no. 1, pp. 78–80. (in Russ.)
  10. Patent RU 2287837(С1), G01R 33/038, Datchik magnitometra (Magnetometer Sensor), V.M. Musalimov, V.L. Tkalich, A.G. Korobeynikov, M.S. Petrishchev, P.A. Sergushin, Patent application no. 2005111814/28, Priority 20.04.2005, Published 20.11.2006. (in Russ.).
  11. Patent RU 2309419(C2), G01R 33/24, Ustroystvo dlya izmereniya parametrov magnitnogo polya (Device for Measuring Magnetic Field Parameters), V.M. Musalimov, V.L. Tkalich, A.G. Korobeynikov, M.S. Petrishchev. Patent application no. 2005130568/28, Priority 03.10.2005, Published 27.10.2007. (in Russ.)
  12. Patent RU 144305(U1), H01H 1/66, Magnitoupravlyayemyy kontakt (Magnetically Controlled Contact), V.L. Tkalich, A.G. Korobeynikov, R.Ya. Labkovskaya, O.I. Pirozhnikova, Patent application no. 2014108108/07, Priority 03.03.2014, Published 20.08.2014. (in Russ.)
  13. Patent RU 136920, Н 01 Н 1/66, Magnitoupravlyaemyy kontakt (Magnetically Operated Contact), Tkalich V.L., Korobeynikov A.G., Labkovskaya R.Ya., Pirozhnikova O.I., Priority 08.08.2013, Published 20.01.2014, (in Russ.)
  14. Patent RU 166022 (U1), H01H 1/66, H01H 37/52, G08B 17/06. Membrannyy termobimetallicheskiy magnitoupravlyayemyy kontakt (Membrane Thermobimetallic Magnetically Controlled Contact), V.L. Tkalich, R.Ya. Labkovskaya, O.I. Pirozhnikova, A.S. Kozlov, Patent application no. 2016115033/07, Priority 18.04.2016, Published 10.11.2016. (in Russ.)
  15. Patent RU 176399(U1), G01R 33/038, Datchik magnitometra (Magnetometer Sensor), V.L. Tkalich, R.Ya. Labkovskaya, O.I. Pirozhnikova, A.S. Kozlov, Patent application no. 2017120116, Priority 07.06.2017, Published 17.01.2018. (in Russ.)
  16. Patent RU 192957(U1), G01L 9/04, B82Y 40/00, Chuvstvitel'nyy element pretsizionnogo datchika davleniya (Sensing Element of a Precision Pressure Sensor), V.L. Tkalich, R.Ya. Labkovskaya, O.I. Pirozhnikova, A.S. Kozlov, M.E. Kalinkina, Patent application no. 2017120116, Priority 07.06.2017, Published 17.01.2018. (in Russ.)